Method of making high voltage semiconductor structure

Details Method of making high voltage semiconductor structure Method of making high voltage semiconductor structure

1977-05-09

1978-11-14

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 20, 357 48, 357 91, H01L 2122, H01L 754, H01L 21265

Patent

active

041254155

ABSTRACT:
A semiconductor p-n junction structure with improved blocking voltage capability. The improvement results from the addition of a doped layer with limited total doping to the main p-n junction. Such a structure is suitable for diodes, transistors, thyristors and the like.

REFERENCES:
patent: 3515956 (1970-06-01), Martin
patent: 3653978 (1972-04-01), Robinson
patent: 3909119 (1975-09-01), Wolley
patent: 3914781 (1975-10-01), Matsushita et al.
patent: 3920493 (1975-11-01), Kravitz

Affiliated with

Also associated with

Rating

Method of making high voltage semiconductor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making high voltage semiconductor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making high voltage semiconductor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1300129