GaAs Dual-gate FET frequency discriminator

Demodulators – Amplitude modulation demodulator – Having specific distortion – noise or other interference...

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307522, 328140, 329116, 329119, 329134, 329192, 329205R, 330277, H03D 326

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active

042557143

ABSTRACT:
A microwave frequency discriminator comprising a dual-gate field effect transistor (FET) amplifier, bias circuits and a detector. The FET is biased to produce an output RF signal within a predetermined frequency bandwidth in response to an input RF signal. A limiter provides a substantially constant power level of the input RF signal to the FET. A detector biasing circuit is used to match electronically the output impedance of the FET to the input impedance of the detector. At such impedance conditions a dc output voltage of the detector varies substantially linearly throughout the frequency bandwidth as a function of the frequency of the input RF signal, approximating the characteristic of a frequency discriminator.

REFERENCES:
patent: 4053841 (1977-10-01), Rosen et al.
patent: 4053842 (1977-10-01), Turski et al.
patent: 4110700 (1978-08-01), Rosen et al.
Maeda et al., "Microwave Variable-Gain Amplifier with Dual-Gate GaAs FET", IEEE Transactions on Microwave Theory and Techniques, vol. MTT-22, No. 12, Dec. 1974, pp. 1226-1230.

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