Methods of manufacturing semiconductor devices

Metal working – Method of mechanical manufacture – Assembling or joining

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29580, 29591, 148175, 148187, 357 59, B01J 1700

Patent

active

041249330

ABSTRACT:
A method of manufacturing a semiconductor device in which a masking layer is formed on part of the surface of a deposited layer of relatively high resistivity polycrystalline semiconductor material present on an insulating layer provided at a surface of a semiconductor body or body part and a relatively low resistivity conductive region having a substantially uniform narrow line width is defined in the polycrystalline layer by effecting a diffusion process to laterally diffuse a doping element into a portion of the polycrystalline layer underlying an edge portion of the masking layer without diffusing the doping element through the insulating layer into the semiconductor body or body part.

REFERENCES:
patent: 3623923 (1971-11-01), Kennedy
patent: 3738880 (1973-06-01), Laker

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods of manufacturing semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of manufacturing semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of manufacturing semiconductor devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1296608

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.