Semiconductor radiation detector

Details Semiconductor radiation detector Semiconductor radiation detector

1978-03-27

1981-03-10

Willis, Davis L.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

250445T, G01T 122

Patent

active

042556597

ABSTRACT:
An electrical charge amplifier including a filter circuit is AC coupled to a semiconductor (CdTe) detector and generates a voltage pulse in response to an electrical charge generated in the detector by an incident pulse of radiation. The filter allows only frequencies within a predetermined range to contribute to the voltage pulse. The selected range of frequencies is determined in accordance with the duration of the incident radiation pulse such that the voltage pulse faithfully represents the magnitude of incident radiation in spite of undersirable detector characteristics which would otherwise introduce distortions. Exemplary charge amplifier and detector structures are also described.

REFERENCES:
patent: 3598997 (1971-08-01), Baertsch
patent: 3624399 (1971-11-01), Boer et al.
patent: 4034223 (1977-07-01), Kowalski
patent: 4055766 (1977-10-01), Miller et al.
Kaufman et al., "Two-Detector, 512-Element High Purity Germanium Camera Prototype," IEEE Transactions on Nuclear Science, vol. NS-25, No. 1, Feb. 1978, pp. 189-195.
R. Allemond et al., "Present Limitations of CdTe Detectors in Nuclear Medicine," Revue de Physique Appliquee, T. 12, Feb. 1977, pp. 365-367.
G. A. Armantrout et al., "What Can Be Expected from High-Z Semiconductor Detectors?," IEEE Transactions on Nuclear Science, vol. NS-24, No. 1, Feb. 1977, pp. 121-125.

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