Light activated solid state switch

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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Details

H01J 4014

Patent

active

043013627

ABSTRACT:
A semiconductor body, having deep lying charge carrier trapping centers, as by being doped with a deep-lying impurity to a concentration such that, at cryogenic temperature, the body is capable of holding off a multi-kilovolt DC bias without thermal instability and of switching the bias with picosecond accuracy to generate pulses of selected durations beyond the subnanosecond range when activated by optical pulses, as from a laser, which are incident thereon.

REFERENCES:
patent: 3917943 (1975-11-01), Auston
patent: 4116063 (1978-09-01), LeBlanc et al.
patent: 4218618 (1980-08-01), Mourou

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