Laser diode

Details Laser diode Laser diode

1981-04-17

1983-10-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 45, H01S 319

Patent

active

044109938

ABSTRACT:
A multi-layer laser diode structure comprised of a semiconductor material, for example, gallium-aluminum-arsenide, having varying amounts of a dopant, such as aluminum, in the respective layers, includes a cover layer which is transparent to laser radiation and provided for total reflection of radiation generated in a laser-active layer positioned below the cover layer and an additional layer positioned on top of the cover layer and supporting a contact on its exterior surface. The additional layer is composed of a semiconductor material having a band gap which is greater by at least 2 kT relative to that of the material forming the laser-active layer. The exterior surface of the additional layer is substantially specularly smooth for radiation generated in the laser-active layer. Non-destructive testing of quality factors decisive for a completed laser diode can occur with this type of construction.

REFERENCES:
patent: 4220960 (1980-09-01), Liu et al.
Smith et al., "Lattice Matched Double Heterojunction . . ." IBM Technical Disclosure Bulletin, vol. 16, No. 11, Apr. 1974, pp. 3808-3809.
D. R. Scifres et al., "Branching Waveguide Coupler in a GaAs/GaAlAs Injection Laser", Appl. Phys. Lett. 32(10), May 15, 1978, pp. 658-661.
F. Stern et al., "Photon Recycling in Semiconductor Lasers", J. App. Physics, vol. 45, Sep. 1979, pp. 3904-3906.
H. C. Casey Jr., et al., "Hetrostructure Lasers" Part A, Fundamental Principles, Academic Press, New York, 1978 pp. 191-193.

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