Long-wavelength infra-red vertical cavity surface-emitting laser

Details Long-wavelength infra-red vertical cavity surface-emitting laser Long-wavelength infra-red vertical cavity surface-emitting laser

1996-07-30

1998-09-08

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 96, H01S 319, H01S 308

Patent

active

058056246

ABSTRACT:
A vertical cavity surface emitting laser (VCSEL) that generates light having a desired wavelength, greater than one micron. The laser comprises a substrate, a lower mirror region, an active region and an upper mirror region. The substrate consists essentially of GaAs. The lower mirror region is adjacent the substrate and is lattice matched to the substrate. The active region is sandwiched between the upper and lower mirror regions, and includes a central quantum well region and a gallium arsenide layer sandwiched between the quantum well region and each of the lower mirror region and the upper mirror region. The central quantum well region includes a quantum well layer consisting essentially of GaN.sub.x As.sub.(1-x). The GaN.sub.x As.sub.(1-x) of the quantum well layer has a lattice constant and a band gap dependent on x. The value of x sets the bandgap of the GaN.sub.x As.sub.(1-x) of the quantum well layer to a value corresponding to light generation at the desired wavelength, greater than one micron. Each gallium arsenide layer is a layer of a material consisting essentially of GaAs or AlGaAs, and is lattice matched to the substrate. The quantum well layer may additionally include a fraction of indium to lattice match the quantum well layer to the substrate.

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K. Nakahara et al., "Continuous-Wave Operation of Long-Wavelength GainNAs/GaAs Quantum Well Laser", Electronics Letters, 15 Aug. 1996, vol. 32, No. 17, pp. 1585-1586.
M. Kondow et al., "Extremely Large N Content (up to 10%) in GaNAs Grown by Gas-Source Molecular Beam Epitaxy", Journal of Crystal Growth, vol. 164, 1996, pp. 175-179 (Jul. 1996).
Kondow, M. et al., "A Novel Material of GAINAS for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance", International Conference on Solid State Devices and Materials, Aug. 21, 1995, pp. 1016-1018.
Margalit, N. M. et al., "Laterally Oxidized Long Wavelength CW Vertical-Cavity Lasers", Applied Physics Letters, vol. 69, No. 4, Jul. 22, 1996, pp. 471-472.
Larson, M. C. et al., "Room Temperature Continuous Wave Photopumped Operation of 1.22 mum GaLnNAs/GaAS Single Quantum Well Vertical Cavity Surface Emitting Laser", Electronics Letters, vol. 33, No. 11, May 22, 1997, pp.959-960.

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