Semiconductor photo-electric converter with insulated gate over

Details Semiconductor photo-electric converter with insulated gate over Semiconductor photo-electric converter with insulated gate over

1979-05-15

1984-01-24

Clawson, Jr., Joseph E.

357 23, 357 30, 357 43, 357 56, H01L 2980

Patent

active

044279906

ABSTRACT:
A high sensitivity semiconductor photo-electric converter is provided by electrically isolating the gate region of a static induction transistor which exhibits non-saturating current versus voltage characteristic. Optically ionized minority carriers are stored in the gate region to control the potential thereof. A semiconductor gate region provided with a insulated gate is very effective to enhance the dynamic range of the converter. Non-saturating characteristic enables enlargement of the output current simply by increasing the drain voltage. A high-speed and high sensitivity image pick-up device can be materialized by integrating a multiplicity of the static induction type photo-electric converter elements. A switching transistor may be merged in the gate region of each photo-electric converter element to enhance the operation speed of the image pick-up device.

REFERENCES:
patent: 3987474 (1976-10-01), Walker
patent: 4000504 (1976-12-01), Berger
patent: 4326210 (1982-04-01), Aso et al.
R. Chen et al., "A Bilateral Analog FET Optocoupler," IEEE Trans. on Con. Elec., vol. CE-24, #3, Aug. 1978, pp. 247-260.

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