Method of forming amorphous silicon films

Details Method of forming amorphous silicon films Method of forming amorphous silicon films

1981-10-29

1983-10-18

Weisstuch, Aaron

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

136258, 357 2, 357 30, 427 74, 427 86, C23C 1100, H01L 3118

Patent

active

044105592

ABSTRACT:
In a method of forming a layer of an amorphous silicon compound by subjecting a gas containing a silane compound to glow discharge decomposition, the improvement wherein the substrate on which the amorphous silicon compound is to be deposited is positioned within 3 cm above or below the end of a positive column formed by said glow discharge.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
D. E. Carlson, "Recent Developments in Amorphous Silicon Solar Cells", Solar Energy Materials, vol. 3, pp. 503-518, (1980).

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