Method of forming solar cell with discontinuous junction

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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29572, 136 89TF, 148 15, 148177, 148187, 357 30, 357 65, H01L 2714, H01L 2904, H01L 3104

Patent

active

041621778

ABSTRACT:
A silicon solar energy cell having a substantially constant voltage despite significant increases in illumination, which cell has a back surface junction that is discontinuous and has spaced, shorted portions formed therein.

REFERENCES:
patent: 3896477 (1975-07-01), Hutson
patent: 3918082 (1975-11-01), Hutson
patent: 3988167 (1976-10-01), Kressel et al.
patent: 3990097 (1976-11-01), Lindmayer
patent: 3999217 (1976-12-01), Einthoven
patent: 4023258 (1977-05-01), Carlson et al.
Wolter, "Metal-Silicon Junctions . . . " Symp. Ohmic Contacts to S/C, ed. B. Schwartz, Electrochem. Soc. 1969.

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