Patent
1975-09-11
1977-04-12
Edlow, Martin H.
357 17, 357 16, 357 20, H01S 3319
Patent
active
040178811
ABSTRACT:
In a method for making a light emitting device having hemispherical dome type geometry, a p-conductivity type and then an n-conductivity type layer are successively grown epitaxially on a substrate made of a mixed compound semiconductor crystal having a band gap wider than the two above-mentioned layers. A surface portion of these epitaxially grown layers, which is not covered by a mask deposited on the n-conductivity type layer at a position where a p-n junction is to be formed, is doped with p-conductivity type impurities so that a small n-conductivity type region is surrounded by a region converted into p-conductivity type. The other side of the crystal is formed into a hemispherical shape so that the n-conductivity type region is located at the central portion of the hemisphere.
REFERENCES:
patent: 3636416 (1972-01-01), Umeda
patent: 3783351 (1974-01-01), Tskuda
patent: 3813587 (1974-05-01), Umeda
patent: 3852798 (1974-12-01), Leabailly
patent: 3855607 (1974-12-01), Kressel
patent: 3912556 (1975-10-01), Grenon
patent: 3936855 (1976-02-01), Goell
Potemski, I.B.M. Tech. Discl. Bull., vol. 15, No. 1, June, 1972, p. 147.
Chang, I.B.M. Tech. Discl. Bull., vol. 15, No. 1, June, 1972, p. 180.
Ito Kazuhiro
Kawamura Masao
Kurata Kazuhiro
Morioka Makoto
Ono Yuichi
Edlow Martin H.
Hitachi , Ltd.
LandOfFree
Light emitting semiconductor device and a method for making the does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting semiconductor device and a method for making the , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting semiconductor device and a method for making the will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1284702