Red light emitting gallium phosphide device

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357 16, 357 63, H01L 3300

Patent

active

040178803

ABSTRACT:
A red light emitting gallium phosphide device comprises an n-type substrate, an n-type layer formed on the substrate using a liquid phase epitaxial growth method, and a p-type layer formed on the n-type layer using the liquid phase epitaxial growth method, the donor concentration of the n-type layer ranging from 1.8 .times. 10.sup.17 cm.sup..sup.-3 to 5.8 .times. 10.sup.17 cm.sup..sup.-3.

REFERENCES:
patent: 3703671 (1972-11-01), Saul
patent: 3934260 (1976-01-01), Kasami

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