Radiation melting of semiconductor surface areas through a remot

Details Radiation melting of semiconductor surface areas through a remot Radiation melting of semiconductor surface areas through a remot

1986-07-16

1988-02-09

Roy, Upendra

Fishing, trapping, and vermin destroying

156635, 156643, 427 531, 437173, H01L 21265, C23F 102

Patent

active

047242191

ABSTRACT:
A method for making semiconductor devices includes selectively simultaneously and momentarily irradiating a semiconductor substrate surface by a pulsed laser through a mask positioned between and spaced away from laser and substrate to briefly melt sub-regions of that surface. An optical beam reducer system is interposed between the relatively large separate mask and the substrate. An optical expander system is interposed between the laser and the mask to further increase the possible mask size and further reduce the radiation density at the mask. Wet photolithographic processing may be eliminated for selective diffusions of dopants, for selective epitaxy, for selectively converting polysilicon layers over silicon substrates to monocrystalline silicon layers and for selectively etching the substrate by a plasma induced by the patterned laser energy. Semiconductor device manufacture may thereby be greatly simplified.

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