Method and device for creating an activatable conducting link in

Details Method and device for creating an activatable conducting link in Method and device for creating an activatable conducting link in

1983-12-28

1986-10-21

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29574, 29577C, 148 15, 148187, 427 88, H01L 21263, H01L 2126

Patent

active

046177230

ABSTRACT:
A method of creating a conducting link between conducting paths of semiconductor device at a specified portion in an integrated circuit. The link is formed using a polysilicon insulating layer having a metal film formed thereon. To activate the link, it is heated by a laser beam and the polysilicon insulating layer and metal film react to form a conducting layer of metal silicide that links the conducting paths. The activation is accomplished by a chemical reaction which forms the metal-silicide at an activation temperature less than an ion diffusion temperature. The lower activation temperature protects devices close to the heated spot, the surface of the substrate is not damaged by a high temperature and the reliablity of the device is increased.

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