Photoelectric conversion apparatus with shock-absorbing layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

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Details

257447, 257460, 257436, 257433, H01L 2714

Patent

active

051986850

ABSTRACT:
A photoelectric conversion apparatus having a thin plate glass wear-resisting layer is formed on photoelectric conversion devices, drive circuit and signal lines. An original document is disposed on the wear-resisting layer to confront the photoelectric conversion devices. Light is emitted from a light source disposed to confront the light transmissive substrate on the side opposing the original document, transmitted through a light transmissive substrate and applied to the original document. Reflected light from the original document is received by the photoelectric conversion devices so that electric signals transmitted from the photoelectric conversion devices can be read out through the signal lines. A protection layer is made of an inorganic thin film and formed on at least the photoelectric conversion devices, the drive circuit and the signal lines; a shock-absorbing layer made of an organic film is disposed at least between an end portion of the wear-resisting layer and the light transmissive substrate.

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patent: 4924282 (1990-05-01), Komiyama et al.
patent: 5017988 (1991-05-01), Komiyama et al.
patent: 5060040 (1991-10-01), Saika et al.
Mukai et al., "Planar Multilevel Interconnection Technology Employing Polyimide," IEEE Journal of Solid-State Circuits, vol. SC-13, No. 4, Aug. 1978, pp. 462-467.
Nikkei Electronics, pp. 207-211, Nov. 16, 1987 (No. 434), "How to Improve Reliability of Close-Contact Image Sensors", Sakamaki et al.

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