Semiconductor device with a semiconductor substrate having diele

Details Semiconductor device with a semiconductor substrate having diele Semiconductor device with a semiconductor substrate having diele

1974-02-05

1976-06-29

Larkins, William D.

357 55, 357 59, H01L 2704, H01L 2712, H01L 2906

Patent

active

039673090

ABSTRACT:
A dielectric insulating film is provided between adjacent monocrystalline semiconductor functional regions, or a dielectric insulating film is provided which extends from the non-exposed major surface of a monocrystalline semiconductor region to the exposed surface thereof to form therein a polycrystalline semiconductor region having a potential intermediate those of both the functional regions for improving the dielectric breakdown voltage and heat dissipation, and for a reduction in the parasitic capacitance.

REFERENCES:
patent: 3381182 (1968-04-01), Thornton
patent: 3411200 (1968-11-01), Formigoni
patent: 3456335 (1969-07-01), Hennings et al.
patent: 3624463 (1971-11-01), Davidsohn
patent: 3624467 (1971-11-01), Bean et al.
patent: 3813584 (1974-05-01), Davidsohn et al.
Doo, IBM Tech. Discl. Bull., vol. 8, No. 5, Oct. 1965, pp. 798-799.

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