LCMOS displays fabricated with implant treated silicon wafers

Details LCMOS displays fabricated with implant treated silicon wafers LCMOS displays fabricated with implant treated silicon wafers

Filed on

1988-10-13

Date issued

1989-06-13

Examiner

James, Andrew J.

Other Related Categories

357 4, 357 236, 357 41, 350332, 350334, 350335, 350336, H01L 2722, H01L 2712, H01L 2702

Type

Patent

Status

active

Patent number

048397075

Description

ABSTRACT:
An improved LCMOS display device employing a silicon-on-insulator (SOI) substrate having an epitaxial silicon layer lying over an implant-generated dielectric layer. MOS device and capacitor elements used to activate the display are formed and interconnected in the epitaxial silicon. The implant-generated dielectric layer and underlying silicon substrate also serve as capacitor elements, thereby simplifying the structure and fabrication of the display device and providing improved operation through improved isolation of the MOS device elements formed in the epitaxial silicon from the substrate.

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patent: 4668969 (1987-05-01), Yamazaki
patent: 4759610 (1988-07-01), Yanagisawa
Sunata, et al., "A 640.times.400 Pixel Active-Matrix LCD Using a-Si TFT's," IEEE Transactions on Electron Devices, vol. ED-33, No. 8, Aug., 1986.
Luo, Fang-Chen, "Storage Capacitors In A TFT Addressed Liquid Crystal Display Panel," Xerox Disclosure Journal, vol. 9, No. 4, Jul./Aug. 1984.
VLSI Electronics Microstructure Science, Einspruch (1982) vol. 4 "Silicon-on-Insulalor for VLSI and VHSIC", Lam et al.

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