High speed and power transistor

Details High speed and power transistor High speed and power transistor

1987-09-23

1989-06-13

Wojciechowicz, Edward J.

357 15, 357 16, 357 55, 357 58, 357 61, H01L 2978

Patent

active

048397032

ABSTRACT:
A high speed and high power transistor includes a first layer of a first semiconductor material, a second layer of a second semiconductor material formed on the first layer, the second semiconductor material having a smaller electron affinity than the first semiconductor material, first and second electrode positioned ends of the second layer, respectively, in contact with the first layer, and a control electrode formed on the second layer between the first and second electrodes, the control electrode injecting holes into the second layer in accordance with an input signal to induce an electron channel between the first and second electrodes.

REFERENCES:
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4486766 (1984-12-01), Shannon
patent: 4558337 (1985-12-01), Saunier et al.

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