Semiconductor device based on charge emission from a quantum wel

Details Semiconductor device based on charge emission from a quantum wel Semiconductor device based on charge emission from a quantum wel

1987-11-20

1989-06-13

James, Andrew J.

357 15, 357 22, 357 231, 357 34, H01L 29161, H01L 29205, H01L 29225

Patent

active

048397024

ABSTRACT:
A semiconductor device implemented on a substrate which includes a first layer of semiconductor material of a first conductivity type composed of a semiconductor material and forming a first active region of said device, and a second layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap material disposed on the first layer and forming a second active region of the device. A third layer of semiconductor material is provided composed of a relatively narrow energy bandgap material disposed on the second layer and having an energy band step such that carriers are confined in that layer. A fourth layer of semiconductor material of a first conductivity type is further provided composed of a relatively wide energy bandgap material disposed on the third layer and forming a third active region of the device. The resulting structure provides a new type of transistor action that combines the properties of both bipolar and field effect transistors in a three terminal electronic device.

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