Method of forming high performance lateral PNP transistor with b

Details Method of forming high performance lateral PNP transistor with b Method of forming high performance lateral PNP transistor with b

1992-07-07

1993-03-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 28, 437917, 437162, 148DIG96, H01L 21265

Patent

active

051983761

ABSTRACT:
A high performance PNP lateral bipolar transistor is described, incorporating at least two trenches extending from the upper P.sup.- surface of a semiconductor substrate almost to a buried N.sup.+ layer. The floor of one trench is heavily N-doped to establish a connection between the buried N.sup.+ layer and an N.sup.- diffusion in the walls of the trench. When the trenches are backfilled with P.sup.+ polysilicon a lateral PNP is formed having a buried base contact.

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