Method of forming opaque border on semiconductor photomask

Details Method of forming opaque border on semiconductor photomask Method of forming opaque border on semiconductor photomask

1996-08-13

1998-09-08

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430315, 205183, G03F 900

Patent

active

058043365

ABSTRACT:
The present invention provides a method of fabricating photomasks having a border region and a pattern region, which may be electrically isolated. The border region may include a nontransparent region, such as an opaque chrome layer. The pattern region may include a substantially nontransparent region, such as a leaky chrome layer. The methods of the present invention include placing the photomask in an electrochemical cell and electrically connecting a portion of the photomask to an electrode, and applying a potential, thereby electrochemically transferring a layer between the electrochemical cell and the photomask.

REFERENCES:
patent: 4451544 (1984-05-01), Kawabuchi
patent: 5578184 (1996-11-01), Imataki et al.

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