Semiconductor speech path switch circuitry

Details Semiconductor speech path switch circuitry Semiconductor speech path switch circuitry

1974-06-28

1976-03-02

Mullins, James B.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

179 18GF, H03K 1756

Patent

active

039420400

ABSTRACT:
A semiconductor speech path switch circuitry is disclosed in which a terminal is provided to one region of a semiconductor device located between two points to be channeled to each other and having a four-region structure of PNPN with three PN junctions, the one region having the lowest impurity concentration in the semiconductor device and also determining the breakdown voltage thereof, a bias voltage being applied to the terminal through a variable impedance circuit exhibiting a high impedance in the turned-on state of the semiconductor device while exhibiting a low impedance in the turned-off state of the semiconductor device. In the semiconductor channel switch circuitry, the crosstalk through the junction capacitances is greatly reduced and the available frequency band is wide.

REFERENCES:
patent: 3531773 (1970-09-01), Beebe
patent: 3688051 (1972-08-01), Aagaard
G.E. Transistor Manual General Electric Company Syracuse, New York, 1964, pp. 393, 394.

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