Low temperature aluminum alloy plug technology

Coating processes – Coating by vapor – gas – or smoke – Metal coating

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4273831, 427404, C23C 1600

Patent

active

058042512

ABSTRACT:
A method for forming an aluminum or aluminum alloy plug in the fabrication of a semiconductor device. An opening is formed in a wafer. A titanium wetting layer is then deposited over the wafer and lines the sidewalls and bottom of the opening. The opening is then filled with aluminum in two steps, both steps being performed at approximately the same temperature. The first aluminum deposition step is performed at a first (slower) deposition rate. The second aluminum deposition step is performed at the same temperature as the first deposition step but at a different (or second/faster) deposition rate until the opening is completely filled.

REFERENCES:
patent: 5108951 (1992-04-01), Chen et al.
patent: 5356836 (1994-10-01), Chen et al.
patent: 5423939 (1995-06-01), Bryant et al.
patent: 5443995 (1995-08-01), Nulman
patent: 5472912 (1995-12-01), Miller
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5527739 (1996-06-01), Parrillo et al.
Paper Presented at SEMICON/Europe;Zurich, Mar. 1992, Aluminum Contact-Hole Filing and Planarization, J. Willer, H. Wendt and D. Emmer; pp. 1-8.

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