Static memory circuit

Static information storage and retrieval – Powering – Conservation of power

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365190, G11C 1140

Patent

active

044096798

ABSTRACT:
A static memory circuit incorporating memory cells of a MOS static type comprising a plurality of potential setting circuits for setting the ground side potential of one selected memory cell to be lower than those of other non-selected memory cells. Thus, reducing power dissipation by reducing current flowing through half-selected and non-selected memory cells without reducing read speed.

REFERENCES:
patent: 3859637 (1975-01-01), Platt et al.
patent: 4295210 (1981-10-01), Bexanger et al.
IEEE International Solid-State Circuits Conference, "Random Access Memories" by Ohzowe et al., Feb. 15, 1980, pp. 236-237.

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