Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1981-03-18

1983-10-11

Edlow, Martin H.

357 59, 357 91, 357 49, H01L 2906, H01L 2904, H01L 2712

Patent

active

044096097

ABSTRACT:
In a method of fabricating a semiconductor device having a V-groove insulating isolation structure with polycrystalline silicon filled in the groove of which internal surface is covered with an insulating film of silicon dioxide, the method according to this invention comprises the steps of selectively ion implanting an impurity material into a desired region of the polycrystalline silicon layer in order to give to this region a desired different type of electric conductivity relative to the polycrystalline silicon layer, followed by a selective annealing by an energy beam, such as laser, of a desired part of the polycrystalline silicon layer, including the region into which the impurity material has been ion implanted.

REFERENCES:
patent: 4037306 (1977-07-01), Gutteridge et al.
patent: 4048649 (1977-09-01), Bohn
patent: 4214918 (1980-07-01), Gat et al.
patent: 4269636 (1981-05-01), Rivoli et al.
patent: 4295924 (1981-10-01), Garnache et al.

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