Method of manufacturing a trench filled with an insulating mater

Details Method of manufacturing a trench filled with an insulating mater Method of manufacturing a trench filled with an insulating mater

1988-03-23

1989-06-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 61, 437228, 437 51, 437 40, 148DIG50, 148DIG158, H01L 21306

Patent

active

048393061

ABSTRACT:
A method of manufacturing a trench filled with an insulation material in a semiconductor substrate which includes the steps of forming a trench in the substrate, subjecting the substrate to an RF bias sputtering to form an oxide layer on the substrate, form a slope at an upper corner of the trench and produce a roundness at a lower corner of the trench, and filling the trench with the insulation material.

REFERENCES:
patent: 4007103 (1977-02-01), Baker et al.
patent: 4702795 (1987-10-01), Douglas
patent: 4749663 (1988-06-01), Okita
Bassous "Low Temperature Methods for Rounding Silicon Nozzles", IBM TDB, vol. 20, No. 2, Jul. 1977, pp. 810-811.

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