Method for fabricating bipolar semiconductor device

Details Method for fabricating bipolar semiconductor device Method for fabricating bipolar semiconductor device

1987-10-13

1989-06-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 33, 437162, 357 59, 357 34, 148DIG10, 148DIG124, H01L 21265

Patent

active

048393029

ABSTRACT:
In a method for fabricating a favorable bipolar semiconductor device in which the extrinsic base and emitter diffusion holes are formed in self-alignment, an optimum structure between the extrinsic base and instrinsic base is realized. By controlling the concentration of the impurities in the extrinsic base, the base contact and emitter region can be finely formed in self-alignment, and occurence of damage or contamination in the intrinsic base region is inhibited.

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