Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1985-12-03

1987-10-27

Smith, John D.

Fishing, trapping, and vermin destroying

427102, 437234, H01L 21285

Patent

active

047029374

ABSTRACT:
The invention relates to a method for manufacturing a semiconductor device with a resistor having a high resistance.
In the invention, a first polycrystalline silicon layer is first formed to connect with an electrically connecting portion formed in a semiconductor substrate. Next, a second polycrystalline silicon layer containing oxygen is formed on the first polycrystalline silicon layer. And then, an oxide formed between the two polycrystalline silicon layer is removed by annealing.

REFERENCES:
patent: 4087571 (1978-05-01), Kamins
patent: 4489103 (1984-12-01), Goodman

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