Method for fabrication mask ROM

Details Method for fabrication mask ROM Method for fabrication mask ROM

1993-08-20

1994-09-27

Fourson, George

Fishing, trapping, and vermin destroying

437 52, 4371924, H01L 21265

Patent

active

053507037

ABSTRACT:
A method for fabricating a mask ROM capable of reducing the processing time taken in fabricating the MROM by the manufacturer after the order by the user, thus improving the productivity. For fabricating the mask ROM, first, a fabrication of a MOS transistor is achieved by forming a gate oxide film, a gate electrode and source/drain regions on a semiconductor substrate. After the formation of the MOS transistor, a BPSG film, a metal electrode, a passivation film and a pad are sequentially formed. Finally the implantation of ROM code ions in accordance with the user's order is carried out, completing the fabrication of the MROM. It is possible to reduce the processing time (turn around time) taken in fabricating the MROM by the manufacturer after the order by the user because the ROM code ion implantation is carried out at the final stage of the MROM fabrication.

REFERENCES:
patent: 4358889 (1982-11-01), Dickman et al.
patent: 4365405 (1982-12-01), Dickman et al.
patent: 4649629 (1987-03-01), Miller et al.
patent: 5094971 (1992-03-01), Kanebako

Affiliated with

Also associated with

Rating

Method for fabrication mask ROM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabrication mask ROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabrication mask ROM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1265304