Power transistor and method of manufacturing same

Details Power transistor and method of manufacturing same Power transistor and method of manufacturing same

1980-03-27

1982-02-09

Clawson, Jr., Joseph E.

357 13, 357 34, 357 36, 357 38, 357 86, 357 89, H01L 2906

Patent

active

043152716

ABSTRACT:
A multilayer power transistor includes an emitter zone having two layers of different doping levels, a less highly doped layer and a more highly doped surface region. The base zone of the transistor includes a central base region of higher doping level than that of the remainder of the base zone and which extends into the emitter surface region. This configuration results in a structure which exhibits a defocalization effect at any current level and improved secondary breakdown characteristics.

REFERENCES:
patent: 3300694 (1967-01-01), Stehney et al.
patent: 3337783 (1967-08-01), Stehney
patent: 3432733 (1969-03-01), Eugster
patent: 3617828 (1971-11-01), Danilok
patent: 3641403 (1972-02-01), Nakata
patent: 3896477 (1975-07-01), Hutson
patent: 4100561 (1978-07-01), Ollendorf
J. Gillett, "Power Transistors Having Increased Reverse Bias Safe Operating Area", IBM Tech. Discl. Bull., vol. 16, #11, Apr. 1974, p. 3642.

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