Process for fabricating a local interconnect structure in a semi

Details Process for fabricating a local interconnect structure in a semi Process for fabricating a local interconnect structure in a semi

1991-04-01

1993-03-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437200, 437 57, 437 60, H01L 2144, H01L 2148

Patent

active

051908930

ABSTRACT:
A local interconnect structure is formed in a semiconductor device. In one form, the semiconductor device has two conductive features (one of 54) and (56) which are to be electrically connected. A layer of metal (62), for instance titanium, is deposited on the device. The layer of metal is patterned to form a strap (64) which connects the two conductive features. After patterning the layer of metal to form the strap, the strap is thermally nitrided to form a conductive metal nitride local interconnect (66).

REFERENCES:
patent: 4657628 (1987-04-01), Holloway et al.
patent: 4980020 (1990-12-01), Douglas
patent: 4994402 (1991-02-01), Chiu
"VLSI Local Interconnect Level Using Titanium Nitride," by Thomas Tang et al., 1985 IEDM Proceedings, pp. 590-593.
"A New Device Interconnect Scheme for Sub-Micron VLSI," by Devereaux C. Chen et al., 1984 IEDM Proceedings, pp. 118-121.

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