Method of making post-metal ion beam programmable MOS read only

Details Method of making post-metal ion beam programmable MOS read only Method of making post-metal ion beam programmable MOS read only

1979-07-09

1981-06-09

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 23, 357 91, H01L 21265, B01J 1700

Patent

active

042723035

ABSTRACT:
An MOS read only memory, or ROM, is formed by a process compatible with standard P-channel or N-channel metal or silicon gate manufacturing methods. The ROM is programmed either after the protective nitride layer has been applied and patterned, usually the last step in the slice processing method before electrical testing of the devices, or after the electrical testing of the devices. All potential MOS transistors in the ROM array are initially at a logic "0" or a logic "1". Selected transistors are programmed by implanting a "light" ion such as hydrogen or helium through the protective nitride layer and the electrode into the gate oxide, photoresist being used as an implant mask.

REFERENCES:
patent: 3852120 (1974-12-01), Johnson et al.
patent: 3861651 (1975-02-01), Arita
patent: 3914855 (1974-10-01), Cheney et al.
patent: 4059826 (1977-11-01), Rogers
patent: 4129936 (1978-12-01), Takei
patent: 4159561 (1979-07-01), Dingwall

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