1987-06-11
1989-08-15
James, Andrew J.
357 24, 357 32, 357 41, 357 45, 357 47, 357 49, 357 231, 357 2311, H01L 2714, H01L 2978, H01L 1710
Patent
active
048579815
ABSTRACT:
A semiconductor imaging device includes lateral MOS static induction transistors including: a semiconductor layer formed on an insulating substrate or a high-resistance semiconductor substrate; and picture elements arranged in the form of a matrix over the surface of the semiconductor layer, the picture elements respectively constituted by lateral MOS static induction transistors each having a source region and a drain region both of which serve as main electrodes and a gate region for storing therein a photoelectric signal. Isolating regions are formed between the respective picture elements vertically or laterally on the matrix so that the picture elements which are adjacent to each other vertically or laterally share their source and drain regions with each other. Accordingly, each of the gate regions constitutes in combination with the adjacent source or drain region an equivalent unit picture element, thereby improving the density of picture-element formation.
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"A New MOS Phototransistor Operating in a Non-Destructive Readout Mode", Mitsumoto et al., Japanese Journal of Applied Physics, vol. 24, No. 5, May 1985, pp. L323-L325.
Matsumoto Kazuya
Nakamura Tsutomu
James Andrew J.
Ngo Ngan Van
Olympus Optical Co,. Ltd.
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