Method of manufacturing an SRAM with increased resistance length

Details Method of manufacturing an SRAM with increased resistance length Method of manufacturing an SRAM with increased resistance length

1998-05-26

2000-11-21

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making passive device

Resistor

438382, 438238, H01L 2120, H01L 218244

Patent

active

061502286

ABSTRACT:
A silicon nitride layer on a ground wire is used for an etching stopping layer so as to form a trench, after which a high-resistance load element is formed so as to extend the length of the resistance by the amount of the step of the trench, and by forming the high-resistance load element in two layers, the resistance length is made large.

REFERENCES:
patent: 5012443 (1991-04-01), Ema
patent: 5543350 (1996-08-01), Chi et al.
patent: 5721166 (1998-02-01), Huang et al.
patent: 5747369 (1998-05-01), Kantimahanti et al.
patent: 5846878 (1998-12-01), Horiba
patent: 5946565 (1999-08-01), Ikeda et al.
patent: 5949113 (1999-09-01), Ota et al.

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