Method of forming an efficient electron emitter cold cathode

Details Method of forming an efficient electron emitter cold cathode Method of forming an efficient electron emitter cold cathode

1977-12-16

1979-04-17

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29572, 29589, 204192P, B01J 1700

Patent

active

041493087

ABSTRACT:
An efficient electron emitter cold cathode is formed by first placing an ype monocrystalline substrate of about 100 to about 500 microns in thickness in a furnace. The furnace is heated to about 850.degree. C. to about 900.degree. C. and an N-type layer of about 10 to 15 microns of SnO.sub.2 is deposited onto the top surface of the substrate using a suitable carrier gas. Then, a P-type layer of about 10 microns of SnO.sub.2 is deposited on the N-type layer. The furnace is then cooled at a rate of about 10.degree. C. per minute to about 600.degree. C. to form the emitter. The furnace is then cooled to room temperature and the emitter removed from the furnace. The emitter is subjected to etching and polishing to obtain a P-type layer of about 2 to 4 microns, and a nonreactive metal contact is then deposited on the P-type layer. The emitter is then completed by bonding a metal contact to the base of the N-type monocrystalline substrate.

REFERENCES:
patent: 3811953 (1974-05-01), Nozik
patent: 3815223 (1974-06-01), Allison
patent: 4027192 (1977-05-01), Hanok

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