Semiconductor device manufacturing: process – Having organic semiconductive component
Patent
1998-12-01
2000-11-21
Elms, Richard
Semiconductor device manufacturing: process
Having organic semiconductive component
438151, 438166, H01L 2100, H01L 5140
Patent
active
061501913
ABSTRACT:
Thin film transistors in which the active layer is an ordered film of a phthalocyanine coordination compound with a field-effect mobility greater than 10.sup.-3 cm.sup.2 /Vs and a conductivity in the range of about 10.sup.-9 S/cm to about 10.sup.-7 S/cm at 20.degree. C. are disclosed. Examples of suitable pthalocyanines include copper phthalocyanine, zinc phthalocyanine, hydrogen phthalocyanine, and tin phthalocyanine. Thin film devices made of these materials have an on/off ratio of at least about 10.sup.4. It is advantageous if the device is fabricated using a process in which the substrate is heated to a temperature in the range of about 30.degree. C. to about 200.degree. C. when the film is formed thereon.
REFERENCES:
patent: 4971977 (1990-11-01), Turano
patent: 4987430 (1991-01-01), Clarisse et al.
patent: 5017989 (1991-05-01), Street et al.
patent: 5294820 (1994-03-01), Yokohamma et al.
patent: 5508507 (1996-04-01), Nelson et al.
patent: 5789737 (1998-08-01), Street
patent: 5798197 (1998-08-01), Paulus et al.
patent: 5969376 (1999-10-01), Bao
"Preparation of Highly Ordered Ultra Thin Films of Copper (11) Photal-cyanide on Amorphous Substrates by Molecular Beam Deposition", by Komiyama, Metal Thin Solid Films, 151, pp. 1.109-1.110, 1987 month unknown.
"Organic-Thin-Film-Induced Molecular Epitaxy from Vapor Phase.", by Nehe, M.K., Thin Solid Fims, 197, pp. 336-347, 1991 month unknown.
"Transport Properties in Nickel Phthalocyanine Thin Films Using Gold Electrodes", by Abdel-Malik, T.G. et al, Thin Films Solid Films, 256, pp. 139-142, 1995 month unknown.
"The First Field Effect Transistor Based on an Intrinsic Molecule Semiconductor", by Madro, Metal, Chemical Physics Letters, vol. 42, No. 1.2, pp. 103-105, Dec. 1987.
"Field-Effect Transistors Based on Intrisic Molecular Semicondutor", by Guillard, G. et al, Chemical Physics Letters, vol. 167, 6, pp. 503-506, Apr. 1990.
"Polythiophene Field-Effect Transistor with Polypyrrole Workclass Source and Drain Electrodes", by Koezcka, Metal, Applied Physics Letters, 62(15), pp. 1794-1796, Apr. 1993.
"Thin Film Transistors Based on Nickel Phthalocyanine", by Guillard, G et al, Journal of Applied Physics, 66, (9), pp. 4554-4556, Nov. 1989.
"Transient Properties of Nickel Phthalocyanine Thin Film Transistors", by Guillard, G. et al, Chemical Physics Letters, 219, pp. 12-16, Mar. 1994.
Field-Effect Transistor with Polythiophene Thin Films, by Koezcka, Metal, Synthetic Metals, 18, pp. 699-705, 1987 month unknown.
"A Universal Relation Between Conductivity and Field Effect Mobility in Doped Amorphous Organic Semiconductors", by Brown, A.R. et al, Synthetic Metal, 68, pp. 65-70, 1994 month unknown.
"Molecular Electron Device: Field Effect Transistor with a Polythiophene Thin Films," Tsumura, A et al, Applied Physics Letters, 49(18), pp. 1210-1212, Nov. 1986.
Botos Richard J.
Elms Richard
Lebentritt Michael S.
Lucent Technologies - Inc.
LandOfFree
Method of making an organic thin film transistor and article mad does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making an organic thin film transistor and article mad, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making an organic thin film transistor and article mad will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1255832