Method for forming a photo diode and a CMOS transistor simultane

Details Method for forming a photo diode and a CMOS transistor simultane Method for forming a photo diode and a CMOS transistor simultane

1999-09-08

2000-11-21

Elms, Richard

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 57, 438 48, H01L 2100

Patent

active

061501891

ABSTRACT:
This invention provides a method of simultaneously forming a photo diode and a CMOS transistor on a semiconductor wafer. The semiconductor wafer comprises a P-type substrate. The surface of the P-type substrate comprises at least one N-channel MOS area for forming an NMOS transistor of the CMOS transistor, a P-channel MOS area for forming a PMOS transistor of the CMOS transistor, and a photo sensing area for forming a photo diode. The method comprises an ion implantation process to form a P-type well in the NMOS area, and an ion implantation process to form a N-type doped area in a predetermined area on the surface of the photo sensing area and also to form a N-type well of the PMOS transistor in the PMOS area. The dopants in the N-type doped area will interact with the neighboring P-type substrate to form a depletion region which fills the P-type substrate within the photo sensing area but outside the predetermined area. Thus, the surface of the photo sensing area is completely covered by the N-type doped area and the depletion region.

REFERENCES:
patent: 4611223 (1986-09-01), Hine et al.
patent: 5841159 (1998-11-01), Lee et al.
patent: 5880495 (1999-03-01), Chen
patent: 6033232 (2000-03-01), Lin et al.
patent: 6040593 (2000-03-01), Park

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