Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1997-12-18
2000-11-21
Tsai, Jey
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438240, H01G 706
Patent
active
061501832
ABSTRACT:
A metal oxide capacitor is manufactured by sequentially laminating a metal oxide film and a secon electrode on a first electrode. The metal oxide film is formed and then heat-treated in an atmosphere with an oxygen pressure higher than 1 atm.
REFERENCES:
patent: 5443030 (1995-08-01), Ishihara et al.
Aoki Katsuhiro
Fukuda Yukio
Nishimura Akitoshi
Numata Ken
Petersen Bret J.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
Tsai Jey
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