GaAs field effect transistor having a WSi Schottky gate electrod

Details GaAs field effect transistor having a WSi Schottky gate electrod GaAs field effect transistor having a WSi Schottky gate electrod

1987-08-14

1989-08-15

James, Andrew J.

357 15, H01L 2980

Patent

active

048579750

ABSTRACT:
A GaAs Schottky gate field effect transistor includes a GaAs substrate, source and drain electrodes ohmically attached to separated first and second parts of the GaAs substrate and a gate electrode of WSi contacted with a third part of the GaAs substrate between the first and second parts of the GaAs substrate, the gate electrode having a gate width of 30 to 60 .mu.m.

REFERENCES:
patent: 4498093 (1985-02-01), Allyn et al.
patent: 4532532 (1985-07-01), Jackson
patent: 4566021 (1986-01-01), Yokoyama
patent: 4729966 (1988-03-01), Koshino et al.

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