Optical detection device with variable detection threshold

Details Optical detection device with variable detection threshold Optical detection device with variable detection threshold

1991-03-20

1992-08-18

Davie, James W.

357 15, 357 30, H01L 3110, H01L 2714

Patent

active

051403811

ABSTRACT:
An optical detection device with a variable detection threshold. The optical detection device comprises at least one element having a heterostructure on a substrate, the heterostructure incorporating two conducting layers and, between the latter, a semiconducting layer forming a potential barrier with each of the conducting layers is provided. Excited electrons are formed when the heterostructure is illuminated by light radiation, whose energy is at least equal to the detection threshold of the heterostructure. This makes it possible to detect the radiation by an internal photoemission of electrons between one conducting layer and the other. The device also comprises variable biasing of the heterostructure, the biasing making it possible to vary the detection spectrum and threshold of the device. The optical detection device finds particular application to the detection of infrared radiation.

REFERENCES:
patent: 4903101 (1990-02-01), Maserjian
patent: 4908686 (1990-03-01), Maserjian
J. M. Pinti Guedes et al, Journal of the Optical Society of America, "Picosecond Thin-Film Metal-Semiconductor-Metal Photodetectors", vol. 70, No. 6, Jun. 1980, pp. 631, 632.
M. Heiblum et al, IEEE Journal of Quantum Electronics, "Characteristics of Integrated MOM Junctions at DC and AT Optical Frequencies", vol. QE14, No. 3, Mar. 1978, pp. 159-169.
B. M. Ditchek et al, Applied Physics Letters, "Novel High Quantum Efficiency Si-TaSi.sub.2 Eutectic Photodiodes", vol. 51, No. 4, Jul. 27, 1987, pp. 267-269.

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