Memory cell made by selective oxidation of polysilicon

Details Memory cell made by selective oxidation of polysilicon Memory cell made by selective oxidation of polysilicon

1988-07-13

1992-04-28

Prenty, Mark

Fishing, trapping, and vermin destroying

357 59, 357 51, 437 52, H01L 2968, H01L 2904, H01L 2702, H01L 2170

Patent

active

051092581

ABSTRACT:
A dynamic read/write memory cell for the one transistor N-channel silicon gate type is made by an improved process employing selective oxidation of polysilicon using. PN junction capacitors. A relatively flat surface results from the process, which is favorable to patterning small geometries. The PN junction storage capacitors have improved alpha particle protection. Metal-to-polysilicon gate contacts are made at silicide areas over polysilicon gates; the silicide lowers resistance of the poly elements.

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IBM Technical Disclosure Bulletin, vol. 18, #10, p. 3288, by Abbas, Mar. 1976.
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