1990-04-27
1991-07-02
Carroll, J.
357 236, 357 55, 357 56, H01L 2968, H01L 2702, H01L 2906
Patent
active
050289802
ABSTRACT:
A trench capacitor (10) has a center portion (26) formed from the substrate (14) by a tubular trench (24). A conducting layer (32) is deposed within the tubular trench (24) and is separated from the substrate (14) and center portion (26) by a dielectric layer (30). Since the charge storage area and the trench capacitor (10) includes both the inside and outside of the trench (24), a greater surface area is obtained, thereby increasing the capacitance of the device. A memory cell (34) may be implemented using the capacitor (10).
REFERENCES:
patent: 4252579 (1981-02-01), Ho et al.
patent: 4591947 (1986-05-01), Bagley et al.
patent: 4672420 (1987-12-01), Miura et al.
patent: 4816884 (1989-03-01), Hwang et al.
patent: 4830978 (1989-05-01), Teng et al.
patent: 4843025 (1989-06-01), Morita
patent: 4873560 (1989-10-01), Sunami et al.
Carroll J.
Comfort James T.
Sharp Melvin
Sorensen Douglas A.
Texas Instruments Incorporated
LandOfFree
Trench capacitor with expanded area does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Trench capacitor with expanded area, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench capacitor with expanded area will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1251131