Semiconductor image sensor with an integrated voltage regulator

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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35821311, H01J 4014

Patent

active

051091550

ABSTRACT:
The semiconductor image sensing device is comprised of a single crystal substrate of one conductivity type, formed thereon with an array of photodetector 5 for effecting photo-electric conversion, a read-out circuit for sequentially reading out an output signal from each photodetector, an amplifier for voltage-converting the read output signal, and a voltage regulator for providing a constant voltage. The read-out circuit and the photodetectors are driven by a lower voltage supplied from the integrated voltage regulator so as to reduce a switching noise generated in the read-out circuit. S/N ratio of the semiconductor image sensor is improved by reducing the switching noise. Further, the power consumption can be saved by driving the read-out circuit at the lower voltage.

REFERENCES:
patent: 4644403 (1987-02-01), Sakai et al.
patent: 4788595 (1988-11-01), Tamada et al.
patent: 4797560 (1989-01-01), Berger et al.
patent: 4847489 (1989-07-01), Dietrich
patent: 4868405 (1989-09-01), Nakamura

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