Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1995-07-12

1998-04-07

Fourson, George R.

Fishing, trapping, and vermin destroying

437 41, 437 40, H01L 21265

Patent

active

057364141

ABSTRACT:
The aim of the present invention is to obtain a thin-film transistor which has a small OFF current. A film whose main component is aluminum and which will be the gate electrode is formed in an island shape, and a porous oxide layer is formed on its side surfaces by an anodic oxidation process. A source region and a drain region are then formed by performing impurity ion implantation. Further, the aforementioned oxide layer is removed, and lightly doped regions are formed by once again performing impurity ion implantation. In this way it is possible to obtain a construction which has lightly doped regions between the source/drain regions and the channel-forming regions.

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Wolf, "Silicon Processing for the VLSI Era" vol. 3, Copyrigh .COPYRGT.1995 Lattice Press, pp. 608-611.

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