Method of making a trench gate complimentary metal oxide semicon

Details Method of making a trench gate complimentary metal oxide semicon Method of making a trench gate complimentary metal oxide semicon

1991-03-01

1992-04-28

Thomas, Tom

Fishing, trapping, and vermin destroying

437 29, 437 34, 437 40, 437 56, 431203, 431228, H01L 2170

Patent

active

051089386

ABSTRACT:
A complimentary trench gate metal-oxide semiconductor transistor is disclosed along with a resulting product. The process for forming the transistor comprises forming a trench within the semiconductor substrate, wherein the semiconductor substrate is doped to a first relative type. A layer doped to a second relative type is applied about the surface of the trench. An insulating layer is then formed within the trench upon said first layer. A region of gate material is formed within the trench upon said insulating layer. Source and drain regions are formed by doping first and second regions adjacent the trench to the opposite relative polarity of the substrate. Segments of the first and second regions are then doped to the same relative polarity as the substrate, the segments being isolated from the substrate by remaining portions of the first and second doped regions. The first layer therefore extends between said source and drain about said trench, and wherein the gate region is isolated from the first layer by the insulating layer.

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