Reduction of hot carrier effects in semiconductor devices by con

Details Reduction of hot carrier effects in semiconductor devices by con Reduction of hot carrier effects in semiconductor devices by con

1990-11-16

1992-04-28

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 31, 437 32, 437 41, 437 44, 437 81, H01L 21328, H01L 21336

Patent

active

051089351

ABSTRACT:
This invention discloses a method for reducing hot carriers in a transistor structure by means of increasing the scattering rate of the carriers. The increased scattering rate is accomplished by introducing scattering sites comprising of non-conventional dopants, an element which is not boron, phosphorous, or arsenic, into the base or channel region of a transistor.

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A New LDD Transistor with Inverse T Gate Structure, Huang et al.; IEEE, Apr. 1987, pp. 451-453.

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