Semiconductor device having WNF film and method of manufacturing

Details Semiconductor device having WNF film and method of manufacturing Semiconductor device having WNF film and method of manufacturing

1997-12-22

1999-01-19

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, H01L 2348, H01L 2352, H01L 2940

Patent

active

058616756

ABSTRACT:
The tungsten nitride film containing fluorine is used as a barrier metal in the contact hole or via hole of the semiconductor device. The tungsten nitride film formed contains 1% to 20% fluorine at atomic density. With this structure, it is possible to obtain a WNF film having a good step coverage for a fine hole.

REFERENCES:
patent: 4746219 (1988-05-01), Holloway et al.
patent: 5221853 (1993-06-01), Joshi et al.
patent: 5280190 (1994-01-01), Lu
patent: 5661334 (1997-08-01), Akram
patent: 5760475 (1998-06-01), Cronin et al.

Affiliated with

Also associated with

Rating

Semiconductor device having WNF film and method of manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having WNF film and method of manufacturing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having WNF film and method of manufacturing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1248984