Reducing base resistance of a BJT by forming a self aligned sili

Details Reducing base resistance of a BJT by forming a self aligned sili Reducing base resistance of a BJT by forming a self aligned sili

1990-04-02

1992-08-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 67, 437162, 437200, 148DIG10, H01L 2133

Patent

active

051399610

ABSTRACT:
A high performance bipolar transistor and a method of fabrication. Base resistance is reduced by a self-aligned silicide formed in the single-crystal region of the extrinsic base, thereby eliminating the polysilicon to single-crystal contact resistance as well as shunting the resistance of the single-crystal extrinsic base region. Oxide from the sidewall of the polysilicon local interconnection is selectively removed prior to silicide formation. Therefore, selected sidewalls of the poly interconnect layer also becomes silicided. This results in significant reductions in resistance of the interconnection, particularly for sub-micron geometries. Improved techniques for forming field oxide regions and for forming base regions of bipolar transistors are also disclosed.

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