Semiconductor device having charge transfer device equipped with

Details Semiconductor device having charge transfer device equipped with Semiconductor device having charge transfer device equipped with

1996-08-02

1999-01-19

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257219, 257227, 257236, 257246, 438 60, 438 75, H01L 27148, H01L 29768

Patent

active

058616420

ABSTRACT:
The semiconductor device of the present invention is equipped with a plurality of photodiodes, a horizontal transfer part and a vertical transfer part, and in particular, the horizontal transfer part or the vertical transfer part has a configuration described as in the following. Namely, the device has a semiconductor region which is formed by regularly and consecutively arranging a plurality of blocks of the same conductivity type, where each of the plurality of the blocks is equipped with three regions of mutually different impurity concentrations, clock pulses are applied to two regions out of the three regions and the voltage of the high level or low level of the clock pulse is applied to the remaining region out of the three regions as a constant potential.

REFERENCES:
patent: 4621369 (1986-11-01), Narabu et al.
patent: 5286987 (1994-02-01), Watanabe
patent: 5289022 (1994-02-01), Iizuka et al.
patent: 5315137 (1994-05-01), Asaumi et al.

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