Photoresist system and photoetching process employing an I-line

Details Photoresist system and photoetching process employing an I-line Photoresist system and photoetching process employing an I-line

Filed on

1990-05-30

Date issued

1992-08-18

Examiner

Bowers, Jr., Charles L.

Patent Class

Radiation imagery chemistry: process, composition, or product th

SubClass

Diazo reproduction, process, composition, or product

SubSubClass

Composition or product which contains radiation sensitive...

Other Related Categories

430312, 430311, 430271, 430273, 430314, 430165, 430156, G03F 7022, G03F 7095, G03F 726

Type

Patent

Status

active

Patent number

051399180

Description

ABSTRACT:
The disclosed photoresist process employs an i-line peak containing light source, such as that of the mercury spectrum, in conjunction with a dye capable of both absorbing i-line light and withstanding subsequent those baking procedures employed in producing portable-conforming-mask (PCM) photoetchings. Applicant has found that a series of butadiene or bromine substituted butadiene dyes in general, and N,N'-Dibutyl-N,N'-Di (1-(4,4-dicyano-1,3-butadiene))-1,6-hexanediamine, in particular, are particularly well suited to these purposes. Such dyes are most preferably used in conjunction with a second dye capable of absorbing of a non-i-line light source used to expose a bottom photoresist layer of a PCM system.

REFERENCES:
patent: 4362809 (1982-12-01), Chen et al.
patent: 4618565 (1986-10-01), White et al.
patent: 4681430 (1987-07-01), Goel et al.
patent: 4719166 (1988-01-01), Blevins et al.
Bassons et al.-"Acridine and Acidine Derivatives in Photoresist . . . " IBM Tech. Dis. Bull. vol 23(7B) 1980 pp. 3387-3390.
Brewer et al. "The Reduction of the Standing-Wave Effect in Positive Photoresists" J. of Applied Photograhic Eng. vol. 7(6) Dec. 1981.

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